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| www..com DC COMPONENTS CO., LTD. R DC9013 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1W output amplifier of portable redios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 40 20 5 500 100 625 +150 -55 to +150 Unit V V V mA mA mW o o 321 .050 Typ (1.27) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 40 20 5 64 40 100 2% Typ 120 - Max 100 100 0.6 1.2 0.9 300 8 Unit V V V nA nA V V V MHz pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA IC=10mA, VCE=1V IC=50mA, VCE=1V IC=500mA, VCE=1V IC=10mA, VCE=1V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) VCE(sat) VBE(sat) VBE(on) hFE1 hFE2 fT Cob 380s, Duty Cycle Classification of hFE1 Rank Range D 64~91 E 78~112 F 96~135 G 112~166 H 144~202 I 176~300 I1 176~246 I2 214~300 |
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